A 2.45 GHz 30dBm differential 0.18 μm CMOS class-E power amplifier with 42% PAE
نویسندگان
چکیده
This paper presents a 30dBm (1W) class-E power amplifier projected in a standard 0.18-μm CMOS technology. The power amplifier (PA) consists in two differentials stages. The main stage employs a cascode class-E RF power amplifier with a self-biasing circuit. The driver stage uses the technique of Injection-Locking to substantially reduce the input power signal, maintaining a high gain. At 2.45 GHz, the power amplifier achieves power added efficiency (PAE) of 42% at an output power of 30 dBm, with a total gain of 28 dB. Keywords-component; CMOS; Power Amplifier; Class-E; Switched; RF; Injection-Locking
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